DMS3017SSD-13 Diodes Inc, DMS3017SSD-13 Datasheet - Page 9

• Manufacturer Part Number: DMS3017SSD-13
• Description: MOSFET 2N-CH 30V 8A/6A SO8
• Manufacturer: Diodes Inc

Specifications of DMS3017SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1276pF @ 15V
• Power - Max: 1.19W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Gate Charge Qg: 30.6 nC
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 1.19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMS3017SSD-13DITR

Package Outline Dimensions
Suggested Pad Layout
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
e
D
Y
b
X
C2
E1
A2
A
E
A3
A1
h
Detail ‘A’
45
°
C1
L
7
°~
9
°
www.diodes.com
Gauge Plane
Seating Plane
Detail ‘A’
9 of 10
Dimensions
C1
C2
X
Y
Dim
Value (in mm)
A1
A2
A3
E1
All Dimensions in mm
A
D
b
E
e
h
L
θ
0.60
1.55
1.27
5.4
0.10
1.30
0.15
4.85
5.90
3.85
0.62
Min
SO-8
0.3
0°
-
-
1.27 Typ
Max
1.75
0.20
1.50
0.25
4.95
6.10
3.95
0.35
0.82
0.5
8°
DMS3017SSD
© Diodes Incorporated
October 2010