DMS3017SSD-13 Diodes Inc, DMS3017SSD-13 Datasheet - Page 6

• Manufacturer Part Number: DMS3017SSD-13
• Description: MOSFET 2N-CH 30V 8A/6A SO8
• Manufacturer: Diodes Inc

Specifications of DMS3017SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1276pF @ 15V
• Power - Max: 1.19W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Gate Charge Qg: 30.6 nC
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 1.19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMS3017SSD-13DITR

Electrical Characteristics – Q2
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
25
20
15
10
0
5
0
0.5
V , DRAIN-SOURCE VOLTAGE (V)
GS
GS
DS
Characteristic
Fig. 12 Typical Output Characteristic
1
= 4.5V)
= 10V)
V
V
GS
GS
1.5
V
= 4.0V
= 10V
GS
= 4.5V
2
2.5
V
GS
3
= 2.5V
3.5
@ T
V
V
A
GS
GS
4
= 25°C unless otherwise stated
= 3.5V
= 3.0V
4.5
Symbol
R
BV
V
5
DS (ON)
t
t
I
I
|Y
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
t
SD
oss
t
DSS
iss
rss
gd
fs
gs
r
f
g
g
g
|
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6 of 10
Min
1.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
478.9
20
15
10
96.7
61.4
10.5
14.6
Typ
2.5
0.7
1.1
5.0
1.8
1.6
2.9
7.9
3.1
15
25
5
0
-
-
-
-
0
V
0.5
DS
±100
Max
2.4
V
Fig. 13 Typical Transfer Characteristic
22
32
= 5V
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
, GATE-SOURCE VOLTAGE (V)
1
Unit
mΩ
μA
nA
pF
nC
Ω
ns
1.5
V
V
S
V
V
V
GS
GS
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
V
R
GS
2
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
GS
G
= 85°C
= 125°C
= 150°C
= 3Ω, R
= 30V, V
= V
= 5V, I
= 15V, V
= 0V, V
= 15V, V
= 15V, V
= 0V, I
= ±20V, V
= 10V, I
= 4.5V, I
= 0V, I
= 10V, V
2.5
GS
Test Condition
, I
DMS3017SSD
D
D
S
L
GS
D
D
= 1mA
D
= 8.8A
= 1A
= 1.5Ω
GS
GS
GS
GS
DS
= 250μA
3
= 8.8A
DS
V
= 7A
= 0V, f = 1MHz
GS
V
= 0V
= 0V,
= 4.5V, I
= 10V, I
= 15V,
GS
= 0V
= -55°C
© Diodes Incorporated
= 25°C
3.5
October 2010
D
D
= 10A
4
= 10A