DMS3017SSD-13 Diodes Inc, DMS3017SSD-13 Datasheet

MOSFET 2N-CH 30V 8A/6A SO8

DMS3017SSD-13

Manufacturer Part Number
DMS3017SSD-13
Description
MOSFET 2N-CH 30V 8A/6A SO8
Manufacturer
Diodes Inc
Datasheet

Specifications of DMS3017SSD-13

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A, 6A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
30.6nC @ 10V
Input Capacitance (ciss) @ Vds
1276pF @ 15V
Power - Max
1.19W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Gate Charge Qg
30.6 nC
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Power Dissipation
1.19 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DMS3017SSD-13DITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMS3017SSD-13
Manufacturer:
DIODES
Quantity:
1 200
Company:
Part Number:
DMS3017SSD-13
Quantity:
2 100
Ordering Information
Marking Information
Features
Notes:
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Low R
Low V
construction
Low Q
diode switching losses
Low gate capacitance (Q
through or cross conduction currents at high frequencies
Avalanche rugged – I
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DMS3017SSD-13
DS(on)
SD
rr
Part Number
– lower Q
– reducing the losses due to body diode
Top View
– minimizes conduction loss
rr
of the integrated Schottky reduces body
AR
and E
(Note 3)
g
/Q
gs
) ratio – reduces risk of shoot-
AR
rated
D2
D2
G1
S1
8
1
S3017SD
YY WW
Internal Schematic
Top View
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Top View
www.diodes.com
Case
SO-8
5
4
1 of 10
Mechanical Data
G2
S2/D1
S2/D1
S2/D1
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
Year: “09” = 2009
Week: 01 ~ 53
Logo
Part no.
Integrated Schottky Diode
N-Channel MOSFET +
G
1
Q1
S
D
1
1
2500 / Tape & Reel
Packaging
G
N-Channel MOSFET
2
DMS3017SSD
Q2
S
D
2
2
© Diodes Incorporated
October 2010

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DMS3017SSD-13 Summary of contents

Page 1

... Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Top View Ordering Information (Note 3) Part Number DMS3017SSD-13 Notes purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DMS3017SSD Document number: DS35052 Rev ...

Page 2

... Steady T = 25°C A State T = 70°C A Steady T = 25°C A State T = 70°C A Steady T = 25°C A State T = 70°C A Steady T = 25°C A State T = 70° 25°C (Note 25°C (Note 25° www.diodes.com DMS3017SSD Symbol Value Unit DSS V ±20 V GSS 8 6 7 Symbol ...

Page 3

... 1276 C iss - 160 C oss - 136 C rss - 15.8 t D(on 29.7 t D(off 3 www.diodes.com DMS3017SSD Max Unit Test Condition - 0V 250μ μA 100 V = 30V ±100 ±20V 2 250μ 10V 9. mΩ 4. 15V 0V 1.0MHz - Ω ...

Page 4

... GS 0. 10V 0. 10A D 0.03 0.02 0. 100 125 150 -50 -25 Fig. 6 On-Resistance Variation with Temperature 100 125 150 0 www.diodes.com DMS3017SSD V = 10V 150° 125° 85° 25° -55° DRAIN CURRENT (A) D Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10V 10A ...

Page 5

... Fig. 9 Typical Total Capacitance 15V 10A TOTAL GATE CHARGE (nC) g Fig. 11 Gate-Charge Characteristics DMS3017SSD Document number: DS35052 Rev 10,000 f = 1MHz 1,000 100 www.diodes.com DMS3017SSD T = 150° 125° 85° 25° DRAIN-SOURCE VOLTAGE (V) DS Fig. 10 Typical Leakage Current vs. Drain-Source Voltage October 2010 © Diodes Incorporated ...

Page 6

... 478.9 C iss - 96.7 C oss - 61.4 C rss - 2.9 t D(on 14.6 t D(off 3 www.diodes.com DMS3017SSD Max Unit Test Condition - 0V 1mA GS D μ 30V ±100 ±20V 2 250μ 10V 8. mΩ 4. 15V 0V 1.0MHz - Ω 0V 0V 1MHz ...

Page 7

... GS 0. 10V 0. 10A D 0.03 0.02 0. 100 125 150 -50 -25 Fig. 17 On-Resistance Variation with Temperature 100 125 150 0 www.diodes.com DMS3017SSD V = 10V 150° 125° 85° 25° -55° DRAIN CURRENT (A) D Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 10V 10A ...

Page 8

... DMS3017SSD Document number: DS35052 Rev 10,000 f = 1MHz 1,000 100 0.9 0.001 0.01 0 PULSE DURATION TIME (s) 1 Fig. 23 Transient Thermal Response www.diodes.com DMS3017SSD T = 150° 125° 85° 25° DRAIN-SOURCE VOLTAGE (V) DS Fig. 21 Typical Leakage Current vs. Drain-Source Voltage R ( θJA θ 113° ...

Page 9

... Suggested Pad Layout DMS3017SSD Document number: DS35052 Rev Gauge Plane A1 Seating Plane L Detail ‘A’ °~ ° ° Detail ‘A’ A3 Dimensions www.diodes.com DMS3017SSD SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3 ...

Page 10

... Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMS3017SSD Document number: DS35052 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMS3017SSD October 2010 © Diodes Incorporated ...

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