DMS3017SSD-13 Diodes Inc, DMS3017SSD-13 Datasheet - Page 2

• Manufacturer Part Number: DMS3017SSD-13
• Description: MOSFET 2N-CH 30V 8A/6A SO8
• Manufacturer: Diodes Inc

Specifications of DMS3017SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1276pF @ 15V
• Power - Max: 1.19W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Gate Charge Qg: 30.6 nC
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 1.19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMS3017SSD-13DITR

Maximum Ratings – Q1
Maximum Ratings – Q2
Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
Notes:
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
6. Repetitive rating, pulse width limited by junction temperature.
7. I
board design. Device contains two active die running at equal power.
at equal power.
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
GS
GS
GS
GS
GS
GS
@TA = 25°C unless otherwise specified
@TA = 25°C unless otherwise specified
Characteristic
Characteristic
Characteristic
= 10V
= 10V
= 4.5V
= 10V
= 10V
= 4.5V
A
A
= 25°C (Note 4)
= 25°C (Note 5)
Steady
Steady
Steady
Steady
Steady
Steady
State
State
State
State
State
State
www.diodes.com
T
T
T
T
T
T
T
T
T
T
T
T
2 of 10
A
A
A
A
A
A
A
A
A
A
A
A
J
= 25°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
= 25°C
= 70°C
Symbol
Symbol
Symbol
T
V
V
J
V
V
R
R
E
E
I
I
,
I
I
P
P
DSS
GSS
I
I
I
DM
DSS
GSS
I
I
I
DM
AR
AR
T
θJA
θJA
AR
AR
D
D
D
D
D
D
D
D
STG
-55 to +150
Value
Value
Value
12.8
12.8
1.19
1.79
±20
±20
107
8.0
6.5
7.8
8.7
7.0
6.0
4.7
7.2
6.0
6.0
5.0
30
10
60
16
30
60
16
70
DMS3017SSD
© Diodes Incorporated
October 2010
°C/W
°C/W
Unit
Unit
Unit
mJ
mJ
°C
W
W
V
V
A
A
A
A
A
V
V
A
A
A
A
A