DMS3017SSD-13 Diodes Inc, DMS3017SSD-13 Datasheet - Page 8

• Manufacturer Part Number: DMS3017SSD-13
• Description: MOSFET 2N-CH 30V 8A/6A SO8
• Manufacturer: Diodes Inc

Specifications of DMS3017SSD-13

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A, 6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 30.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1276pF @ 15V
• Power - Max: 1.19W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 mOhms
• Gate Charge Qg: 30.6 nC
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 1.19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMS3017SSD-13DITR

DMS3017SSD
Document number: DS35052 Rev. 2 - 2
1,000
100
10
10
8
6
4
2
0
0
0
0.001
0.01
Fig. 22 Gate-Charge Characteristics
2
V , DRAIN-SOURCE VOLTAGE (V)
0.1
5
Q , TOTAL GATE CHARGE (nC)
DS
0.00001
1
Fig. 20 Typical Total Capacitance
g
C
D = 0.1
D = 0.02
D = 0.01
D = 0.005
D = 0.05
D = 0.7
V
D = 0.5
D = 0.3
rss
I = 10A
D = Single Pulse
DS
D
C
4
10
oss
= 15V
C
iss
0.0001
6
15
8
20
0.001
f = 1MHz
10
25
Fig. 23 Transient Thermal Response
t , PULSE DURATION TIME (s)
0.01
1
12
30
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D = 0.9
0.1
8 of 10
10,000
1,000
100
10
1
0
1
V , DRAIN-SOURCE VOLTAGE (V)
5
DS
Fig. 21 Typical Leakage Current
10
P(pk)
vs. Drain-Source Voltage
Duty Cycle, D = t /t
T - T = P * R
10
R
J
θJA
R
θ
JA
t
(t) = r(t) *
A
1
t
= 113°C/W
2
100
15
θ
R
JA
1 2
θ
JA
(t)
20
DMS3017SSD
T = 150°C
1,000
A
T = 125°C
T = 25°C
A
A
T = 85°C
A
25
© Diodes Incorporated
October 2010
30