QVE11233 Fairchild Optoelectronics Group, QVE11233 Datasheet - Page 2

• Manufacturer Part Number: QVE11233
• Description: SENS OPTO SLOT 3.81MM TRANS THRU
• Manufacturer: Fairchild Optoelectronics Group
• Type: Unamplifiedr

Specifications of QVE11233

• Sensing Distance: 0.150" (3.81mm)
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - Dc Forward (if): 50mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Mounting Type: Through Hole
• Package / Case: PCB Mount
• Operating Temperature: -40°C ~ 85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Response Time: -
• Other names: QVE11233QT; QVE11233QT

©2009 Fairchild Semiconductor Corporation
QVE11233 Rev. 1.0.0
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Derate power dissipation linearly, on each component, 1.67mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron tip 1/16” (1.6mm) from housing.
Electrical/Optical Characteristics
INPUT (EMITTER)
OUTPUT (SENSOR)
INPUT (EMITTER)
OUTPUT (SENSOR)
COUPLED
Symbol
V
BV
BV
Symbol
CE (SAT)
I
I
C(ON)
T
T
CEO
V
V
T
T
V
I
SOL-F
SOL-I
R
ECO
CEO
V
P
P
OPR
STG
CEO
ECO
F
I
I
C
F
R
D
D
Forward Voltage
Reverse Leakage Current
Emitter to Collector Breakdown
Collector to Emitter Breakdown
Collector to Emitter Leakage
On-State Collector Current
Saturation Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Continuous Forward Current
Reverse Voltage
Power Dissipation
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation
Parameter
(1)
(1)
(T
Parameter
A
= 25°C unless otherwise specified)
(2)(3)(4)
(2)(4)
(T
A
= 25°C)
I
V
I
I
V
I
I
F
E
C
F
F
R
CE
= 20mA
= 100µA, E
= 20mA, V
= 20mA, I
= 1mA, E
= 2V
= 10V, E
Test Conditions
2
e
C
CE
e
= 0
e
= 0.25mA
= 0
= 0
= 5V
260 for 10 sec
240 for 5 sec
-40 to +85
-40 to +85
Min.
Rating
5.0
0.5
30
100
150
4.5
50
30
20
6
Typ.
Max.
0.40
100
100
1.7
www.fairchildsemi.com
Units
mW
mW
mA
mA
°C
°C
°C
°C
V
V
V
Units
mA
µA
nA
V
V
V
V