APTM50DHM35G Microsemi Power Products Group, APTM50DHM35G Datasheet - Page 5

• Manufacturer Part Number: APTM50DHM35G
• Description: MOSFET MOD ASYMMETRIC BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DHM35G

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 99A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.2
1.1
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
10
-50 -25
-50 -25
Capacitance vs Drain to Source Voltage
Threshold Voltage vs Temperature
0
V
Breakdown Voltage vs Temperature
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
C
10
, Case Temperature (°C)
0
0
25
25
20
50 75 100 125 150
50
30
75 100 125 150
40
Coss
Ciss
Crss
www.microsemi.com
50
1000
100
10
14
12
10
1
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
1
0
APTM50DHM35G
-50 -25
I
T
limited by R
D
J
V
=99A
=25°C
Single pulse
T
T
50
DS
ON resistance vs Temperature
V
I
J
C
D
T
Maximum Safe Operating Area
=150°C
GS
=49.5A
=25°C
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
=10V
100 150 200 250 300 350
DSon
Gate Charge (nC)
0
10
25
V
50 75 100 125 150
DS
=250V
100
V
DS
=100V
V
DS
100 us
100 ms
10 ms
=400V
1 ms
1000
5 – 6