APTM50DHM35G Microsemi Power Products Group, APTM50DHM35G Datasheet - Page 3

• Manufacturer Part Number: APTM50DHM35G
• Description: MOSFET MOD ASYMMETRIC BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DHM35G

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 99A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Symbol Characteristic
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on
www.microsemi.com
Torque
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
For terminals
Transistor
Diode
APTM50DHM35G
M6
M5
2500
Min
-40
-40
-40
3
2
Typ
Max
0.16
150
125
100
280
0.6
3.5
5
°C/W
Unit
N.m
°C
V
g
3 – 6