APTM50DHM35G Microsemi Power Products Group, APTM50DHM35G Datasheet - Page 4

• Manufacturer Part Number: APTM50DHM35G
• Description: MOSFET MOD ASYMMETRIC BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50DHM35G

• Fet Type: 2 N-Channel (Asymmetrical Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 99A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 14000pF @ 25V
• Power - Max: 781W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.05
0.95
400
300
200
100
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.1
0.9
0.1
0.00001
1
0
0
0
0
Normalized to
V
Low Voltage Output Characteristics
0.05
V
GS
0.9
0.7
V
0.3
0.5
0.1
GS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10V @ 49.5A
DS
20
=10&15V
R
, Drain to Source Voltage (V)
5
DS
I
D
(on) vs Drain Current
, Drain Current (A)
40
0.0001
10
60
15
V
V
GS
80
8V
5.5V
GS
=10V
=20V
20
100
0.001
rectangular Pulse Duration (Seconds)
7V
6.5V
6V
www.microsemi.com
5V
120
Single Pulse
25
0.01
300
250
200
150
100
50
100
0
90
80
70
60
50
40
30
20
10
DC Drain Current vs Case Temperature
0
0
APTM50DHM35G
25
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
GS
Transfert Characteristics
> I
, Gate to Source Voltage (V)
T
D
50
C
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
75
(on)MAX
T
J
=25°C
4
1
100
6
T
125
J
=-55°C
10
150
8
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