APTM100H45STG Microsemi Power Products Group, APTM100H45STG Datasheet - Page 7

• Manufacturer Part Number: APTM100H45STG
• Description: MOSFET FULL BRIDGE SER/PAR SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100H45STG

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 154nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
300
250
200
150
100
160
140
120
100
1.5
0.5
50
80
60
40
20
0
2
1
0
0
6
5
5
Operating Frequency vs Drain Current
V
R
T
L=100µH
Switching Energy vs Current
switching
J
DS
G
V
R
T
L=100µH
=125°C
10
10
=5Ω
Hard
J
DS
G
=667V
8
=125°C
=5Ω
Delay Times vs Current
=667V
I
I
I
D
D
15
D
15
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
10
ZCS
20
20
12
ZVS
25
25
t
t
d(off)
d(on)
E
14
on
E
30
30
off
V
D=50%
R
T
T
DS
J
C
G
=125°C
=75°C
=5Ω
=667V
16
35
35
40
40
18
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1000
100
2.5
1.5
0.5
60
50
40
30
20
10
10
1
0
2
1
0
0.2 0.4 0.6 0.8
Source to Drain Diode Forward Voltage
5
0
Switching Energy vs Gate Resistance
APTM100H45STG
V
R
T
L=100µH
DS
G
J
=125°C
V
I
T
L=100µH
=5Ω
D
V
Rise and Fall times vs Current
=667V
J
DS
=18A
10
=125°C
SD
=667V
5
T
, Source to Drain Voltage (V)
J
Gate Resistance (Ohms)
=150°C
I
15
D
, Drain Current (A)
10
20
T
15
E
1
J
off
=25°C
25
1.2 1.4 1.6 1.8
t
t
20
f
r
30
25
E
35
E
on
off
30
40
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