APTM100H45STG Microsemi Power Products Group, APTM100H45STG Datasheet

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APTM100H45STG

Manufacturer Part Number
APTM100H45STG
Description
MOSFET FULL BRIDGE SER/PAR SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100H45STG

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
540 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
154nC @ 10V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
357W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
G2
S2
R
V
NTC1
V
E
E
I
MOSFET Power Module
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Series & parallel diodes
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
G3
S3
VBUS
S1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Q2
Full bridge
CR1A
CR2A
0/VBUS
CR1B
CR2B
O UT1 OUT2
0/VBUS
CR3B
CR4B
G4
G2
S4
S2
VBUS
CR3A
CR4A
Parameter
Q3
Q4
OUT2
OUT1
NTC2
NTC1
NTC2
G3
G4
S3
S4
www.microsemi.com
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 18A @ Tc = 25°C
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 1000V
= 450mΩ typ @ Tj = 25°C
T
T
T
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
APTM100H45STG
c
c
c
= 25°C
= 80°C
= 25°C
DSon
®
MOSFETs
Max ratings
1000
2500
±30
540
357
18
14
72
18
50
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTM100H45STG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100H45STG V = 1000V DSS R = 450mΩ typ @ Tj = 25°C DSon I = 18A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100H45STG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

Page 3

... Operating Case Temperature C Torque Mounting torque Wt Package Weight Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   APTM100H45STG Test Conditions T = 25° =1000V 125° 65° 30A 60A 30A T = 125°C F ...

Page 4

... SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100H45STG ALL DIMENSIO NS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4 – 7 ...

Page 5

... V , Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 9A 1.3 GS 1.2 V =10V GS 1.1 1 0.9 0 Drain Current (A) D APTM100H45STG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature 20 18 ...

Page 6

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100H45STG ON resistance vs Temperature 2.5 V =10V GS I =9A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 100 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100H45STG 60 V ...

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