APTM100H45STG Microsemi Power Products Group, APTM100H45STG Datasheet - Page 6

• Manufacturer Part Number: APTM100H45STG
• Description: MOSFET FULL BRIDGE SER/PAR SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100H45STG

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 154nC @ 10V
• Input Capacitance (ciss) @ Vds: 4350pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
Ciss
www.microsemi.com
50
100
10
14
12
10
1
0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
Gate Charge vs Gate to Source Voltage
1
0
APTM100H45STG
-50 -25
I
T
limited by
R
D
J
V
I
DS
=18A
D
V
=25°C
Maximum Safe Operating Area
GS
=9A
DS
on
T
ON resistance vs Temperature
=10V
40
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
0
Single pulse
T
T
Gate Charge (nC)
10
J
C
=150°C
=25°C
80
25
V
DS
=500V
50
120
V
DS
75 100 125 150
100
=200V
100µs
160
V
DS
=800V
10ms
1ms
1000
200
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