APT50M60JVR Microsemi Power Products Group, APT50M60JVR Datasheet - Page 4

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APT50M60JVR

Manufacturer Part Number
APT50M60JVR
Description
MOSFET N-CH 500V 63A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT50M60JVR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 31.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
63A
Vgs(th) (max) @ Id
4V @ 5mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
10600pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50M60JVR
Manufacturer:
APT
Quantity:
25
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
7,000
6,000
5,000
4,000
3,000
2,000
1,000
700
600
500
400
300
200
100
252
100
50
10
16
12
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
0
1
V
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
E
diode reverse recovery.
DS
I
V
R
T
L = 100µH
T C =+25°C
T J =+150°C
SINGLE PULSE
D
J
DD
G
ON
LIMITED BY R DS (ON)
J
DD
G
OPERATION HERE
= 63A
= 125°C
100 200 300 400 500 600 700 800
= 125°C
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
= 333V
includes
= 333V
30
Q
30
g
, TOTAL GATE CHARGE (nC)
E
off
V DS = 250V
50
50
10
V DS = 400V
I
I
D
D
V DS = 100V
70
70
(A)
(A)
E
t
d(on)
on
90
90
100
t
d(off)
110
110
130
500
130
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
25,000
20,000
15,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
5,000
100
200
100
250
200
150
100
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
50
1
0
0
10
0
0.3
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery.
D
DS
SD
J
DD
G
DD
J
ON
= 63A
= 125°C
= 125°C
= 5Ω
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 333V
= 333V
includes
0.5
30
R
10
10
G
, GATE RESISTANCE (Ohms)
T J =+150°C
t
15 20 25 30 35 40
r
0.7
50
20
T J =+25°C
I
D
0.9
70
(A)
E
t
on
f
30
E
1.1
90
off
40
110
1.3
C rss
C oss
45 50
C iss
APT50M60JVR
130
1.5
50

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