APT50M60JVR Microsemi Power Products Group, APT50M60JVR Datasheet - Page 2

• Manufacturer Part Number: APT50M60JVR
• Description: MOSFET N-CH 500V 63A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M60JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 10600pF @ 25V
• Power - Max: 568W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
C
t
t
R
R
V
dv
C
C
Q
Q
Q
E
E
d(on)
d(off)
E
E
I
t
Q
SM
I
θJC
SD
θJA
oss
t
t
S
iss
rss
rr
/
on
off
on
off
gs
gd
r
f
rr
dt
g
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.05
0.3
0.1
10
-4
3
dv
1
2
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
= -
63A
= 0V, I
10
RECTANGULAR PULSE DURATION (SECONDS)
63A
, dl
SINGLE PULSE
-3
, dl
S
S
/dt = 100A/µs)
= -
S
/dt = 100A/µs)
63A
)
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
10
V
RESISTIVE SWITCHING
V
Test Conditions
DD
-2
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 333V, V
= 333V, V
= 63A, R
= 63A, R
dt
V
V
= 63A @ 25°C
= 63A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
G
GS
= 0.6Ω
= 250V
= 250V
= 25V
= 10V
= 15V
= 0V
j
G
G
= +25°C, L = 1.61mH, R
GS
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
10
≤
-
-1
I
D
63A
di
Note:
/
dt
Peak T J = P DM x Z θJC + T C
MIN
MIN
MIN
≤ 700A/µs
Duty Factor D =
1.0
G
t 1
= 25Ω, Peak I
10600
1800
1235
2820
1700
2900
TYP
t 2
TYP
680
TYP
795
560
285
70
20
25
80
10
17
V
R
t 1
/ t 2
≤ 500V
APT50M60JVR
MAX
MAX
MAX
0.22
252
L
1.3
63
40
8
= 63A
10
T
J
≤ 150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
J
C