APT50M60JVR Microsemi Power Products Group, APT50M60JVR Datasheet - Page 3

• Manufacturer Part Number: APT50M60JVR
• Description: MOSFET N-CH 500V 63A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M60JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 63A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 10600pF @ 25V
• Power - Max: 568W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. (°C)
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
70
60
50
40
30
20
10
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
(watts)
Power
V DS > I D (ON) x R DS (ON)MAX.
V
FIGURE 4, TRANSFER CHARACTERISTICS
V
I
GS
D
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
= 31.5A
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 10V
T
J
1
T
, JUNCTION TEMPERATURE (°C)
50
C
, CASE TEMPERATURE (°C)
0
2
T J = +125°C
25
75
RC MODEL
T J = +25°C
50
3
0.0516
0.149
0.0198
T J = -55°C
100
75
4
100 125 150
125
5
0.0260F
0.448F
42.3F
150
6
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
200
180
160
140
120
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50 -25
0
0
V
V GS =15 & 10V
V
DS
GS
FIGURE 5, R
NORMALIZED TO
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
20
= 10V @ 31.5A
T
I
J
D
5
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
40
0
0
10
DS
60
25
25
(ON) vs DRAIN CURRENT
V GS =10V
15
80
50
50
V GS =20V
8V
100 120 140 160
75
75
7.5V
20
100 125 150
100 125 150
7V
25
6.5V
5.5V
6V
30