FMG2G75US60 Fairchild Semiconductor, FMG2G75US60 Datasheet - Page 6

• Manufacturer Part Number: FMG2G75US60
• Description: IGBT MOLDING 600V 75A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G75US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.056nF @ 30V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
10000
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 17. RBSOA Characteristics
1000
500
100
500
100
0.1
0.1
100
10
10
1
1
0.3
0
20
I
I
C
C
Single Nonrepetitive
Pulse T
V
R
Eon
Eoff
Single Nonrepetitive
Pulse T
Curves must be derated
linerarly with increase
in temperature
MAX. (Pulsed)
MAX. (Continuous)
GE
Common Emitter
V
R
T
T
G
CC
C
C
G
= 3.3
= 15V
= 25
= 125
= 3.3
= 300V, V
100
0
40
J
C
Ω
C
0
Ω
C
= 25
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
125
GE
1
200
= +/- 15V
60
Collector Current, I
DC Operation
300
80
10
400
100
C
[A]
500
1
CE
CE
100
120
[V]
[V]
100us
600
Eoff
Eon
50us
140
1000
700
Fig 16. Turn-Off SOA Characteristics
Fig 18. Transient Thermal Impedance
Fig 14. Gate Charge Characteristics
1E-3
0.01
100
0.1
15
12
10
9
6
3
0
1
1
10
1
0
-5
Common Emitter
R
T
C
L
= 4
= 25
50
10
Ω
-4
Collector-Emitter Voltage, V
Rectangular Pulse Duration [sec]
V
100
CC
Gate Charge, Qg [ nC ]
= 100 V
10
10
-3
150
10
-2
Safe Operating Area
V
200
GE
= 20V, T
100
10
-1
250
T
IGBT
DIODE :
200 V
CE
C
C
= 100
= 25
[V]
300 V
10
300
:
o
0
C
FMG2G75US60 Rev. A
1000
350
10
1