FMG2G50US60 Fairchild Semiconductor, FMG2G50US60 Datasheet - Page 5

• Manufacturer Part Number: FMG2G50US60
• Description: IGBT MOLDING 600V 50A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G50US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 30V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
7000
6000
5000
4000
3000
2000
1000
Fig 7. Capacitance Characteristics
1000
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
100
100
10
0
10
1
Common Emitter
V
R
T
T
Common Emitter
V
I
T
T
CC
C
C
C
G
C
C
CC
= 25
= 125
= 50A
= 5.9
Gate Resistance
= 25
= 125
= 300V, V
20
Collector Current
= 300V, V
0
C
Ω
0
0
C
1
C
0
C
Collector - Emitter Voltage, V
30
GE
Cies
GE
Coes
Cres
= +/- 15V
= +/- 15V
40
Collector Current, I
Gate Resistance, R
50
60
10
C
g
[A]
70
[
Ω
10
Common Emitter
V
T
]
C
GE
= 25
CE
= 0V, f = 1MHz
80
[V]
90
Toff
Ton
Tr
Tf
100
1000
10000
100
1000
Fig 8. Turn-On Characteristics vs.
1000
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
10
100
1
1
10
Common Emitter
V
I
T
T
C
Common Emitter
V
I
T
T
CC
C
C
C
Common Emitter
V
R
T
T
= 50A
CC
C
C
= 25
= 125
= 50A
CC
G
C
C
= 300V, V
= 25
= 125
= 300V, V
= 25
= 125
= 5.9
Collector Current
= 300V, V
20
0
C
0
0
C
C
0
0
C
C
Ω
0
C
GE
30
GE
GE
= +/- 15V
= +/- 15V
Gate Resistance, R
= +/- 15V
Gate Resistance, R
Collector Current, I
40
50
10
60
10
G
G
Eoff
[
[
C
Ω
Ω
70
[A]
]
]
80
Eon
Toff
Ton
Toff
Tf
Tf
Eoff
Tr
90
FMG2G50US60 Rev. A
100