APTGT50TDU170PG Microsemi Power Products Group, APTGT50TDU170PG Datasheet - Page 4

• Manufacturer Part Number: APTGT50TDU170PG
• Description: IGBT MOD TRIPLE DUAL SOURCE SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50TDU170PG

• Igbt Type: Trench and Field Stop
• Configuration: Triple, Dual - Common Source
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 70A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
100
100
50
40
30
20
10
0.45
0.35
0.25
0.15
0.05
80
60
40
20
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.4
0.3
0.2
0.1
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 50A
T
Output Characteristics (V
10
0.5
= 125°C
J
6
= 900V
=125°C
=15V
0.5
0.3
0.05
0.7
0.9
0.1
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
1.5
30
8
0.0001
V
T
V
CE
J
GE
40
=25°C
2
9
(V)
(V)
T
J
2.5
=25°C
50
10
T
GE
60
J
11
3
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
70
www.microsemi.com
12
Eon
Eoff
Er
Single Pulse
80
13
4
IGBT
0.01
APTGT50TDU170PG
125
100
50
40
30
20
10
75
50
25
100
0
0
80
60
40
20
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
=125°C
= 10Ω
=10Ω
0.1
J
= 900V
= 15V
=15V
= 125°C
400
20
1
Output Characteristics
800
40
V
I
2
GE
C
V
(A)
=20V
CE
V
CE
1200
(V)
1
60
(V)
V
3
GE
=15V
1600
V
80
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
100
5
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