APTGT50TDU170PG Microsemi Power Products Group, APTGT50TDU170PG Datasheet
APTGT50TDU170PG
Specifications of APTGT50TDU170PG
Related parts for APTGT50TDU170PG
APTGT50TDU170PG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT50TDU170PG ® Application C5 • AC Switches • Switched Mode Power Supplies G5 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT50TDU170PG = 25°C unless otherwise specified j Test Conditions Min 1700V 25° 15V 50A T = 125°C ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT50TDU170PG Min IGBT Diode 3500 -40 -40 -40 To heatsink M6 www.microsemi.com Typ Max Unit 0.4 ° ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT50TDU170PG =15V) GE 100 =125° 2 Energy losses vs Collector Current =25° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT50TDU170PG Forward Characteristic of diode 100 ...