APTGT50TDU170PG Microsemi Power Products Group, APTGT50TDU170PG Datasheet - Page 3

• Manufacturer Part Number: APTGT50TDU170PG
• Description: IGBT MOD TRIPLE DUAL SOURCE SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50TDU170PG

• Igbt Type: Trench and Field Stop
• Configuration: Triple, Dual - Common Source
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 70A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 310W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
SP6-P Package outline
Symbol Characteristic
Torque
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
APTGT50TDU170PG
Diode
IGBT
M6
3500
Min
-40
-40
-40
3
Typ
Max
150
125
100
250
0.4
0.7
5 places (3:1)
5
°C/W
Unit
N.m
°C
V
g
3 - 5