APTGT50TDU170PG Microsemi Power Products Group, APTGT50TDU170PG Datasheet - Page 3
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APTGT50TDU170PG
Manufacturer Part Number
APTGT50TDU170PG
Description
IGBT MOD TRIPLE DUAL SOURCE SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50TDU170PG.pdf
(5 pages)
Specifications of APTGT50TDU170PG
Igbt Type
Trench and Field Stop
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
70A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.4nF @ 25V
Power - Max
310W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
SP6-P Package outline
Symbol Characteristic
Torque
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
APTGT50TDU170PG
Diode
IGBT
M6
3500
Min
-40
-40
-40
3
Typ
Max
150
125
100
250
0.4
0.7
5 places (3:1)
5
°C/W
Unit
N.m
°C
V
g
3 - 5