APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 9

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APTGV50H120BTPG

Manufacturer Part Number
APTGV50H120BTPG
Description
IGBT NPT BST CHOP FULL BRDG SP6P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV50H120BTPG

Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
270W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
8. Full bridge bottom switches curves
8.1 Bottom fast NPT IGBT typical performance curves
300
250
200
150
100
200
160
120
50
80
40
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
25
Breakdown Voltage vs Junction Temp.
250µs Pulse Test
< 0.5% Duty cycle
J
V
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
4
2
Transfer Characteristics
11
50
T
J
=125°C
12
8
4
75
13
T
J
=25°C
T
14
T
J
GE
J
12
100
=25°C
T
6
=25°C
J
=15V)
=125°C
Ic=100A
Ic=50A
Ic=25A
15
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125
16
16
8
APTGV50H120BTPG
18
16
14
12
10
70
60
50
40
30
20
10
50
40
30
20
10
8
6
4
2
0
6
5
4
3
2
1
0
0
0
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
CE
J
= 50A
= 25°C
50
Output Characteristics (V
, Collector to Emitter Voltage (V)
T
50
J
, Junction Temperature (°C)
T
50
C
1
100
, Case Temperature (°C)
Gate Charge (nC)
Gate Charge
75
150
75
V
2
CE
200
=600V
100
250µs Pulse Test
< 0.5% Duty cycle
V
GE
T
J
= 15V
=25°C
V
250
GE
CE
100
T
=10V)
=240V
3
J
V
125
=125°C
Ic=100A
Ic=50A
Ic=25A
CE
300
=960V
125
350
150
4
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