APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 8

• Manufacturer Part Number: APTGV50H120BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV50H120BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.2 Top Fast diode typical performance curves
100
12
10
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.00001
8
6
4
2
0
0
0
0
0.8
0.6
0.4
0.2
5
0.00001
V
V
I
T
C
1
0
J
CE
GE
= 50A
= 125°C
0.9
0.5
0.3
0.1
0.05
0.7
= 600V
10
=15V
T
J
6
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
=125°C
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.3
0.7
0.5
0.1
0.05
7
30
0.0001
0.0001
8
V
GE
40
T
(V)
J
=25°C
9
50
160
140
120
100
10
80
60
40
20
60
T
0
Rectangular Pulse Duration (Seconds)
J
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
0.0
=125°C
Forw ard Current vs Forw ard Voltage
0.001
Eon
Eoff
11
70
V
F
, Anode to Cathode Voltage (V)
Single Pulse
80
12
1.0
T
J
=1 25°C
Single Pulse
0.01
0.01
2.0
T
J
APTGV50H120BTPG
120
100
=25°C
12
10
80
60
40
20
8
6
4
2
0
0
3.0
0
0
V
V
R
T
V
T
R
0.1
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
GE
J
0.1
G
= 125°C
=125°C
= 18Ω
=18Ω
= 600V
= 15V
=15V
300
20
4.0
Eoff
600
40
I
C
V
1
CE
(A)
1
(V)
900
60
1200
80
Eon
Eon
10
1500
10
100
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