APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 6

• Manufacturer Part Number: APTGV50H120BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV50H120BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Characteristic
NTC
Symbol Characteristic
B
V
R
I
R
Q
V
RRM
RM
I
t
25/85
thJC
rr
F
25
rr
F
(see application note APT0406 on www.microsemi.com for more information).
4. Temperature sensor
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal resistance
Resistance @ 25°C
T
25
3.2 Chopper diode characteristics
= 298.15 K
R
T
=
exp



B
25
/
85
R

 

25
T
1
25
−
T
1

 

www.microsemi.com



T: Thermistor temperature
R
Test Conditions
V
I
I
I
I
V
di/dt =200A/µs
T
F
F
F
F
: Thermistor value at T
R
R
= 60A
= 120A
= 60A
= 60A
=1200V
= 800V
APTGV50H120BTPG
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
1200
Min
Min
2890
3952
Typ
265
350
560
Typ
2.5
1.8
60
50
3
Max
Max
100
500
0.9
3
Unit
°C/W
Unit
µA
kΩ
nC
ns
V
A
V
K
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