APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 7

• Manufacturer Part Number: APTGV100H60BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Characteristic
Torque
V
T
Wt
T
T
ISOL
STG
C
J
* Tj=175°C for Trench & Field Stop IGBT
5. Package characteristics
6. SP6-P Package outline (dimensions in mm)
7. Full bridge top switches curves
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
7.1 Top Trench + Field Stop IGBT typical performance curves
200
175
150
125
100
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
75
50
25
0
0
Output Characteristics (V
0.5
T
J
=125°C
T
1
J
=25°C
V
T
CE
J
1.5
=25°C
(V)
2
GE
T
J
=15V)
=150°C
2.5
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3
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
To heatsink
APTGV100H60BTPG
200
175
150
125
100
75
50
25
0
0
T
M6
J
= 150°C
0.5
1
Output Characteristics
2500
Min
-40
-40
-40
2.5
V
1.5
GE
V
=19V
CE
(V)
2
Typ
V
GE
2.5
=15V
9 places (3:1)
V
GE
V
=13V
Max
150*
GE
125
100
250
4.7
3
=9V
3.5
Unit
N.m
°C
V
g
7 - 15