APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 13

• Manufacturer Part Number: APTGV100H60BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000000
100000
10000
1000
1.2
1.1
1.0
0.9
0.8
1.1
1.0
0.9
0.8
0.7
0.6
100
10
Capacitance vs Drain to Source Voltage
25
25
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
0
V
T
J
DS
, Junction Temperature (°C)
T
50
50
, Drain to Source Voltage (V)
C
10
, Case Temperature (°C)
Coss
75
75
20
100
100
30
125
125
40
Ciss
Crss
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150
150
50
APTGV100H60BTPG
1000
100
12
10
8
6
4
2
0
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
I
T
limited by R
25
D
J
40
=95A
V
=25°C
Maximum Safe Operating Area
DS
V
I
T
D
ON resistance vs Temperature
GS
= 95A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
80 120 160 200 240 280 320
=10V
50
Single pulse
T
T
DS
Gate Charge (nC)
J
C
on
=150°C
=25°C
10
75
V
DS
=300V
100
100
V
DS
V
=120V
125
DS
100 µs
=480V
10 ms
1 ms
150
1000
13 - 15