APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 13
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APTGV100H60BTPG
Manufacturer Part Number
APTGV100H60BTPG
Description
IGBT NPT BST CHOP FULL BRDG SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGV100H60BTPG.pdf
(15 pages)
Specifications of APTGV100H60BTPG
Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1000000
100000
10000
1000
1.2
1.1
1.0
0.9
0.8
1.1
1.0
0.9
0.8
0.7
0.6
100
10
Capacitance vs Drain to Source Voltage
25
25
Breakdown Voltage vs Temperature
Threshold Voltage vs Temperature
0
V
T
J
DS
, Junction Temperature (°C)
T
50
50
, Drain to Source Voltage (V)
C
10
, Case Temperature (°C)
Coss
75
75
20
100
100
30
125
125
40
Ciss
Crss
www.microsemi.com
150
150
50
APTGV100H60BTPG
1000
100
12
10
8
6
4
2
0
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Gate Charge vs Gate to Source Voltage
0
1
I
T
limited by R
25
D
J
40
=95A
V
=25°C
Maximum Safe Operating Area
DS
V
I
T
D
ON resistance vs Temperature
GS
= 95A
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
80 120 160 200 240 280 320
=10V
50
Single pulse
T
T
DS
Gate Charge (nC)
J
C
on
=150°C
=25°C
10
75
V
DS
=300V
100
100
V
DS
V
=120V
125
DS
100 µs
=480V
10 ms
1 ms
150
1000
13 - 15