APTGV100H60BTPG Microsemi Power Products Group, APTGV100H60BTPG Datasheet - Page 12

• Manufacturer Part Number: APTGV100H60BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

9. Boost chopper switch curves
1.25
1.15
1.05
0.95
0.25
0.15
0.05
720
640
560
480
400
320
240
160
0.3
0.2
0.1
1.3
1.2
1.1
0.9
9.1 CoolMOS™ typical performance curves
80
0.00001
0
1
0
0
0
Low Voltage Output Characteristics
Normalized to
V
V
GS
0.05
0.5
0.1
0.7
0.9
0.3
DS
40
=10V @ 95A
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
V
R
GS
, Drain to Source Voltage (V)
5
DS
=15&10V
I
(on) vs Drain Current
80
D
, Drain Current (A)
0.0001
10
120 160 200 240 280
15
V
GS
=10V
V
20
0.001
6.5V
GS
6V
4.5V
5.5V
4V
5V
=20V
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
25
0.01
APTGV100H60BTPG
280
240
200
160
120
80
40
100
0
80
60
40
20
DC Drain Current vs Case Temperature
0
0
25
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
V
GS
> I
Transfert Characteristics
1
T
, Gate to Source Voltage (V)
D
C
(on)xR
50
, Case Temperature (°C)
2
T
J
=25°C
DS
T
(on)MAX
75
J
3
=125°C
1
4
100
5
125
6
10
150
7
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