APTGT200TL60G Microsemi Power Products Group, APTGT200TL60G Datasheet - Page 7

• Manufacturer Part Number: APTGT200TL60G
• Description: POWER MODULE IGBT 600V 200A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200TL60G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 12.2nF @ 25V
• Power - Max: 652W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT200TL60GMI; APTGT200TL60GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR5 & CR6 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
400
300
200
100
5
4
3
2
1
0
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
0.4
0.3
0.2
0.1
0.00001
0
0
0
0
0.5
2.5
0.3
Forward Characteristic of diode
0.1
0.9
0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
T
0.4
J
=150°C
Gate Resistance (ohms)
5
0.8
0.0001
7.5
V
1.2
F
(V)
T
10
J
1.6
=25°C
V
I
T
C
J
CE
= 200A
= 150°C
= 300V
12.5
Rectangular Pulse Duration in Seconds
0.001
2
Single Pulse
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15
2.4
0.01
8
6
4
2
0
0
V
R
T
CE
J
G
Energy losses vs Collector Current
= 150°C
= 1.8 Ω
APTGT200TL60G
0.1
= 300V
100
I
F
200
(A)
1
300
10
400
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