APTGT200TL60G Microsemi Power Products Group, APTGT200TL60G Datasheet - Page 5

• Manufacturer Part Number: APTGT200TL60G
• Description: POWER MODULE IGBT 600V 200A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200TL60G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 12.2nF @ 25V
• Power - Max: 652W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT200TL60GMI; APTGT200TL60GMI

400
350
300
250
200
150
100
400
350
300
250
200
150
100
14
12
10
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
50
8
6
4
2
0
0.2
0.1
0
0
0.00001
0
0
0
5
0.9
Output Characteristics (V
0.7
0.5
0.3
0.1
T
2.5
0.05
J
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
6
=150°C
Transfert Characteristics
Gate Resistance (ohms)
T
T
J
J
7
=125°C
=125°C
5
T
1
J
=25°C
Eoff
0.0001
V
8
V
T
CE
7.5
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
9
J
=25°C
10
2
10
V
V
I
T
Eon
C
GE
J
CE
GE
T
= 200A
= 150°C
J
=15V)
12.5
=150°C
= 300V
=15V
2.5
Rectangular Pulse Duration in Seconds
0.001
11
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15
3
12
Single Pulse
0.01
500
400
300
200
100
14
12
10
400
350
300
250
200
150
100
8
6
4
2
0
0
50
0
0
0
0
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
J
GE
G
J
= 150°C
50 100 150 200 250 300 350 400
=150°C
= 1.8Ω
100
0.1
=1.8Ω
= 150°C
= 300V
= 15V
=15V
0.5
APTGT200TL60G
200
Output Characteristics
1
300
1.5
V
I
C
V
GE
V
(A)
CE
=19V
CE
400
(V)
1
(V)
2
V
GE
500
2.5
Eoff
=15V
V
GE
V
=13V
600
GE
3
=9V
Eon
10
700
3.5
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