APTGT200TL60G Microsemi Power Products Group, APTGT200TL60G Datasheet - Page 6

• Manufacturer Part Number: APTGT200TL60G
• Description: POWER MODULE IGBT 600V 200A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200TL60G

• Igbt Type: Trench and Field Stop
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 12.2nF @ 25V
• Power - Max: 652W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGT200TL60GMI; APTGT200TL60GMI

CR1 to CR4 Typical performance curve
300
250
200
150
100
0.6
0.5
0.4
0.3
0.2
0.1
4
3
2
1
0
Switching Energy Losses vs Gate Resistance
50
0.00001
0
0
0
0
0.5
0.3
0.9
0.1
0.7
0.05
2.5
Forward Characteristic of diode
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
0.4
J
=150°C
Gate Resistance (ohms)
5
0.8
0.0001
7.5
V
1.2
F
(V)
T
10
J
=25°C
1.6
V
I
T
C
J
CE
= 150A
= 150°C
12.5
0.001
Rectangular Pulse Duration in Seconds
= 300V
2
Single Pulse
15
2.4
www.microsemi.com
0.01
5
4
3
2
1
0
0
Energy losses vs Collector Current
0.1
50
APTGT200TL60G
100
I
F
150
(A)
1
200
V
R
T
J
CE
G
= 150°C
= 2.4Ω
= 300V
250
10
300
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