1321XEVK Freescale Semiconductor, 1321XEVK Datasheet - Page 62

KIT EVALUATION FOR 1321X

1321XEVK

Manufacturer Part Number
1321XEVK
Description
KIT EVALUATION FOR 1321X
Manufacturer
Freescale Semiconductor
Type
Zigbeer
Datasheets

Specifications of 1321XEVK

Frequency
2.4GHz
Wireless Frequency
2.4 GHz
Modulation
DSSS OQPSK
Security
128 bit AES
Operating Voltage
2 VDC to 3.4 VDC
Operating Temperature Range
- 40 C to + 85 C
For Use With/related Products
MC1321x
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
6.4.4
This section provides details about program/erase times and program-erase endurance for the FLASH
memory. Program and erase operations do not require any special power sources other than the normal
V
62
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
DD
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Non-volatile Memory.
0 < f
0 < f
T
T = 25°C
L
supply.
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
FLASH Specifications
4
2
(2)
Characteristic
1
3
(2)
(2)
MC13211/212/213 Technical Data, Rev. 1.8
Table 21. FLASH Characteristics
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
100,000
Typical
20,000
4000
100
9
4
Freescale Semiconductor
Max
6.67
200
3.6
3.6
3.6
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V

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