MWE6IC9100NR1 Freescale Semiconductor, MWE6IC9100NR1 Datasheet - Page 9

• Manufacturer Part Number: MWE6IC9100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100NR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
−10
40
30
20
10
0
400
Figure 23. Broadband Frequency Response
600
V
I
DQ1
800
DD
f, FREQUENCY (MHz)
= 26 Vdc
= 120 mA, I
S21
1000
S11
DQ2
10
10
8
6
2
0
8
6
2
0
4
4
1
1
= 950 mA
Figure 21. EVM and Power Added Efficiency
Figure 22. EVM and Power Added Efficiency
1200
V
I
I
f = 945 MHz
V
I
I
f = 880 MHz
DQ1
DQ2
DQ1
DQ2
DD
DD
= 28 Vdc
= 28 Vdc
= 230 mA
= 870 mA
= 230 mA
= 870 mA
versus Output Power @ 880 MHz
versus Output Power @ 945 MHz
TYPICAL CHARACTERISTICS
1400
P
P
out
out
, OUTPUT POWER (WATTS) AVG.
, OUTPUT POWER (WATTS) AVG.
1600
0
−5
−10
−15
−20
−25
10
10
PAE
PAE
T
T
25_C
C
C
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
= 25_C
= −30_C
38
36
34
32
30
28
26
820
Figure 24. Power Gain versus Frequency
840
EVM
85_C
85_C
EVM
−30_C
860
100
100
T
50
40
30
10
0
50
40
30
10
0
20
C
20
880
f, FREQUENCY (MHz)
= −30_C
25_C
85_C
V
I
900
DQ1
DD
= 26 Vdc, P
= 120 mA, I
920
out
DQ2
940
= 60 W CW
= 950 mA
960
980
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