MWE6IC9100NR1 Freescale Semiconductor, MWE6IC9100NR1 Datasheet - Page 2

• Manufacturer Part Number: MWE6IC9100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100NR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
GSM Application
(P
GSM EDGE Application
(P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
out
out
DS
DS
GS
DS
DS
DD
= 100 W CW)
= 50 W Avg.)
= 66 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 5 Vdc, V
= 26 Vdc, I
DS
D
D
D
GS
GS
= 35 μAdc)
= 120 mAdc)
= 120 mAdc, Measured in Functional Test)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Characteristic
Test Methodology
Characteristic
(1,2)
Rating
(T
C
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25°C unless otherwise noted)
DQ1
DQ2
DQ1
DQ2
= 120 mA
= 950 mA
= 230 mA
= 870 mA
Symbol
Rating
V
V
V
I
I
I
GS(th)
GS(Q)
GG(Q)
DSS
DSS
GSS
3
Symbol
Symbol
V
R
V
T
T
T
DSS
θJC
stg
GS
C
J
Min
Package Peak Temperature
1.5
—
—
—
—
6
III (Minimum)
B (Minimum)
2 (Minimum)
260
Typ
2.7
9.4
—
—
—
2
- 65 to +150
Value
Class
- 0.5, +66
- 0.5, +6
Value
1.82
0.38
1.77
0.44
150
225
Freescale Semiconductor
(2,3)
Max
3.5
10
10
12
—
1
RF Device Data
(continued)
°C/W
Unit
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C