MWE6IC9100NR1 Freescale Semiconductor, MWE6IC9100NR1 Datasheet - Page 10

• Manufacturer Part Number: MWE6IC9100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100NR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
10
−100
−110
10
10
10
10
10
−10
−20
−30
−40
−50
−60
−70
−80
−90
8
7
6
5
4
90
Figure 25. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Center 1.96 GHz
600 kHz
110
Reference Power
400 kHz
TYPICAL CHARACTERISTICS
1st Stage
T
130
J
DD
Figure 26. EDGE Spectrum
, JUNCTION TEMPERATURE (°C)
GSM TEST SIGNAL
= 26 Vdc, P
150
out
200 kHz
170
= 100 W CW, and PAE = 54%.
190
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
210
2nd Stage
400 kHz
Span 2 MHz
230
600 kHz
250
Freescale Semiconductor
RF Device Data