MWE6IC9100NR1 Freescale Semiconductor, MWE6IC9100NR1 Datasheet - Page 7

• Manufacturer Part Number: MWE6IC9100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MWE6IC9100NR1

• Frequency: 960MHz
• Gain: 33.5dB
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Voltage - Supply: 28V
• Number Of Channels: 1
• Frequency (max): 960MHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (typ): 28V
• Single Supply Voltage (max): 32V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Noise Figure: -
• P1db: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
58
57
56
55
54
53
52
51
50
49
48
40
38
36
34
32
30
28
26
14
1
1
P1dB = 50.9 dBm (123 W)
Figure 9. Intermodulation Distortion Products
Figure 11. Pulsed CW Output Power versus
G
Efficiency versus Output Power @ 880 MHz
V
I
f1 = 945 MHz, f2 = 945.1 MHz
100 kHz Tone Spacing
V
I
DQ1
DQ2
DD
ps
15
DD
Figure 13. Power Gain and Power Added
P3dB = 51.5 dBm (140 W)
= 26 Vdc
= 120 mA, I
= 26 Vdc, I
= 950 mA, f = 880 MHz
16
T
P
C
P
25_C
85_C
out
= −30_C
out
17
P6dB = 51.95 dBm (156 W)
, OUTPUT POWER (WATTS) PEP
DQ1
DQ2
versus Output Power
, OUTPUT POWER (WATTS) CW
P
in
V
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 945 MHz
, INPUT POWER (dBm)
= 120 mA
18
= 950 mA
DD
PAE
Input Power
10
= 26 Vdc, I
10
19
20
DQ1
5th Order
7th Order
= 120 mA, I
21
22
3rd Order
Ideal
TYPICAL CHARACTERISTICS
100
DQ2
−30_C
23
= 950 mA
100
85_C
Actual
Actual
24
25_C
300
200
25
70
60
50
40
30
20
10
0
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
38
36
34
32
30
28
26
1
−10
−20
−30
−40
−50
−60
−70
−80
34
33
32
31
30
29
28
G
Efficiency versus Output Power @ 945 MHz
0
ps
0.1
Figure 12. Power Gain and Power Added
PAE
Figure 14. Power Gain versus Output Power
V
I
(f1 + f2)/2 = Center Frequency of 945 MHz
DQ2
DD
= 26 Vdc, P
= 1 A, Two−Tone Measurements
Figure 10. Intermodulation Distortion
Products versus Tone Spacing
P
P
out
50
out
V
T
DD
C
, OUTPUT POWER (WATTS) CW
85_C
, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
out
= −30_C
= 20 V
= 100 W (PEP), I
10
25_C
1
V
I
I
f = 945 MHz
DQ1
DQ2
DD
100
24 V
= 26 Vdc
= 120 mA
= 950 mA
DQ1
= 150 mA
10
5th Order
100
150
I
I
f = 945 MHz
32 V
DQ1
DQ2
7th Order
3rd Order
= 120 mA
= 950 mA
25_C
−30_C
85_C
300
60
50
40
30
20
10
0
200
100
7