STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 7

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

STF/I/P/U4N62K3
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations
I
1000
D
V
100
(V)
(pF)
(A)
12
10
10
GS
C
8
7
6
5
0
6
2
4
3
2
8
4
0
1
1
0
0
0.1
V
DS
Output characteristics
5
5
1
V
10
10
GS
V
DD
=10V
I
D
=3.8A
=496V
15
15
10
20
20
100
25
25
V
GS
6V
Q
V
5V
7V
DS
Doc ID 17548 Rev 2
g
V
(nC)
AM07177v1
AM07175v1
AM07179v1
DS
(V)
500
400
100
0
300
200
Ciss
Coss
Crss
(V)
Figure 9.
Figure 13. Output capacitance stored energy
R
DS(on)
E
(µJ)
(A)
(Ω)
1.5
0.5
I
1.9
1.8
1.7
1.6
oss
2.5
2.0
1.0
1.5
3.0
D
6
5
0
2
4
3
1
0
0
0
0
Transfer characteristics
100
2
1
200 300
V
V
DS
GS
=15V
4
=10V
Electrical characteristics
2
400
6
500 600
3
8
I
V
D
GS
(A)
AM07176v1
AM07178v1
AM07180v1
V
(V)
DS
(V)
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