STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 5

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

STF/I/P/U4N62K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
Symbol
I
V
BV
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
GSO
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 17548 Rev 2
V
R
(see
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 3.8 A, V
= 3.8 A, di/dt = 100 A/µs
= 3.8 A, di/dt = 100 A/µs
= 300 V, I
Figure
= 60 V (see
= 60 V, T
Figure
Test conditions
Test conditions
Test conditions
19)
24)
GS
GS
j
D
= 150 °C
= 1.9 A,
= 10 V
= 0
Figure
24)
Electrical characteristics
Min.
Min.
Min.
30
-
-
-
-
-
Typ.
Typ.
220
270
10
29
19
Typ.
1.4
1.9
13
14
9
-
Max
Max. Unit
15.2
Max. Unit
3.8
1.6
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18
V