STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 3

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

STF/I/P/U4N62K3
1
Electrical ratings
Table 2.
1. Limited by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
V
Symbol
R
Symbol
R
dv/dt
ESD(G-S)
I
thj-case
DM
P
thj-amb
V
V
V
E
T
I
SD
T
I
I
TOT
AR
T
ISO
GS
DS
AS
stg
D
D
l
j
(2)
(3)
≤ 3.8 A, di/dt = 400 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
C
j
= 25°C, I
= 25 °C)
Parameter
Parameter
D
C
DD
Doc ID 17548 Rev 2
= I
= 25 °C
GS
= 80% V
AR
= 0)
, V
DD
C
C
(BR)DSS
= 25 °C
= 100 °C
= 50V)
j
max)
, V
DS peak
TO-220
TO-220
≤ V
I²PAK
(BR)DSS.
1.79
15.2
IPAK
3.8
70
2
- 55 to 150
Value
Value
2500
± 30
62.5
300
620
115
150
3.8
12
IPAK
I²PAK
Electrical ratings
TO-220FP
TO-220FP
15.2
3.8
2500
2
25
5
(1)
(1)
(1)
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
A
V
V
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