STP4N62K3 STMicroelectronics, STP4N62K3 Datasheet - Page 12

• Manufacturer Part Number: STP4N62K3
• Description: MOSFET N-CH 620V 3.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STP4N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.95 Ohms
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 3 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10651-5

Package mechanical data
12/18
Table 10.
DIM.
A1
B5
V1
b2
b4
e1
L1
L2
c2
D
H
A
E
b
c
e
L
IPAK (TO-251) mechanical data
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
Doc ID 17548 Rev 2
16.10
mm.
2.28
0.80
10
typ
0.3
o
STF/I/P/U4N62K3
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
1.00