SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4501ADY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.3W
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-GE3TR

Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.10
0.08
0.06
0.04
0.02
0.00
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
V
= 5.7 A
GS
On-Resistance vs. Drain Current
= - 4 V
2
= 2.5 V
5
3
V
V
GS
DS
Q
Output Characteristics
g
= 5 V thru 3.5 V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
10
4
6
V
GS
= 4.5 V
3 V
15
6
9
2.5 V
2 V
20
12
8
1.5 V
10
25
15
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
30
24
18
12
0
6
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
0.5
GS
= 5.7 A
= 4.5 V
V
V
T
GS
Transfer Characteristics
DS
2
0
J
1.0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25
Capacitance
C
1.5
iss
S09-0868-Rev. D, 18-May-09
50
4
Document Number: 71922
2.0
T
C
25 °C
75
= - 55 °C
2.5
100
6
3.0
125 °C
125
150
3.5
8