SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4501ADY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.3W
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-GE3TR

Si4501ADY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
100
0.4
0.2
0.0
10
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
T
J
J
= 150 °C
I
25
D
- Temperature (°C)
= 250 µA
0.6
50
75
0.8
0.01
T
100
0.1
10
J
1
100
= 25 °C
0.1
* V
1.0
Limited by R
125
GS
Single Pulse
T
A
V
= 25 °C
1.2
minimum V
DS
150
- Drain-to-Source Voltage (V)
Safe Operating Area
DS(on)*
1
GS
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
100
80
60
40
20
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
I
D
4
= 8.8 A
Time (s)
S09-0868-Rev. D, 18-May-09
0.1
Document Number: 71922
6
1
8
10
10