SI4501ADY Vishay Siliconix, SI4501ADY Datasheet
SI4501ADY
Manufacturer Part Number
SI4501ADY
Description
Si4501ADY vs. Si4501DY
Manufacturer
Vishay Siliconix
Datasheet
1.SI4501ADY.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4501ADY
Manufacturer:
VISHAY
Quantity:
90
Part Number:
SI4501ADY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4501ADY-T1-E3
Manufacturer:
RENESAS
Quantity:
10 000
Company:
Part Number:
SI4501ADY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4501ADY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4501ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
Package:
Pin Out:
Part Number Replacements:
Summary of Performance:
The Si4501ADY is the replacement for the original Si4501DY; both parts perform identically including limits to the parametric
tables below.
Document Number: 72891
14-Jun-04
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On State Drain Current
On-State Drain Current
Drain Source On Resistance
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Si4501ADY Replaces Si4501DY
Si4501ADY—E3 (Lead Free version) Replaces Si4501DY
Si4501ADY-T1 Replaces Si4501DY-T1
Si4501ADY-T1—E3 (Lead Free version) Replaces Si4501DY-T1
Parameter
SOIC-8
Identical
Parameter
J
V
V
V
V
V
V
GS
GS
GS
= 25 _C UNLESS OTHERWISE NOTED)
GS
GS
GS
= −4.5 V
= −4.5 V
= −2.5 V
= 4.5 V
= 10 V
= 10 V
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
Si4501ADY vs. Si4501DY
Symbol Channel
V
r
r
(BR)DSS
V
I
I
D (
Ds(on)
I
I
D(
D(on)
V
GSS
DSS
G(th)
g
SD
fs
)
A
Symbol
T
)
j
and T
R
= 25 _C UNLESS OTHERWISE NOTED)
V
V
I
P
P
I
I
DM
thJA
I
GS
DS
D
D
S
D
D
stg
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
−0.45
Min
−20
0.8
30
−8
30
Si4501ADY
Si4501ADY
−55 to 150
0.015
0.030
0.022
0.048
−0.75
Typ
0.73
"20
−5.7
−4.5
−1.8
18
12
−30
"8
8.8
7.0
1.8
2.5
1.6
30
−8
30
50
Specification Comparison
"100
Max
0.018
0.042
0.027
0.060
−1.0
−1.1
1.8
−1
1
Si4501DY
−55 to 150
"20
−6.2
−5.0
−1.7
"8
−20
9.0
7.4
1.7
2.5
1.6
30
−8
30
50
−0.45
Min
−20
0.8
30
−8
30
Vishay Siliconix
Si4501DY
0.015
0.034
0.022
0.048
−0.70
Typ
Unit
0.71
_C/W
20
14
_C
V
V
W
W
A
A
"100
Max
0.018
0.042
0.027
0.060
−1.1
www.vishay.com
1.1
−1
1
Unit
nA
mA
V
V
A
A
W
W
S
V
1
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SI4501ADY Summary of contents
Page 1
... Si4501ADY—E3 (Lead Free version) Replaces Si4501DY Si4501ADY-T1 Replaces Si4501DY-T1 Si4501ADY-T1—E3 (Lead Free version) Replaces Si4501DY-T1 Summary of Performance: The Si4501ADY is the replacement for the original Si4501DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (T Parameter ...
Page 2
... Vishay Siliconix SPECIFICATIONS ( UNLESS OTHERWISE NOTED) J Parameter Parameter Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Time Turn-On Time Turn Off Time Turn-Off Time Source-Drain Reverse Recovery Time www.vishay.com 2 Si4501ADY Min Typ Symbol Symbol Channel Channel N-Ch 11.5 Qg P-Ch 13.5 N-Ch 3 Qgs P-Ch 2.2 N-Ch ...