SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4501ADY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.3W
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-GE3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71922
S09-0868-Rev. D, 18-May-09
0.05
0.04
0.03
0.02
0.01
0.00
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
V
= 8.8 A
GS
On-Resistance vs. Drain Current
V
= 15 V
2
GS
3
6
= 10 V thru 5 V
V
DS
Q
= 4.5 V
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
12
4
6
4 V
18
6
9
3 V
V
GS
= 10 V
12
24
8
10
15
30
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
8
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
- 25
rss
V
I
D
GS
C
= 8.8 A
oss
= 10 V
1
6
V
DS
0
T
V
Transfer Characteristics
C
J
GS
- Drain-to-Source Voltage (V)
iss
- Junction Temperature (°C)
- Gate-to-Source Voltage
25
Capacitance
12
2
50
Vishay Siliconix
T
C
Si4501ADY
18
= - 55 °C
3
75
25 °C
100
www.vishay.com
24
4
125 °C
125
150
30
5
3