STR750FV2H6 STMicroelectronics, STR750FV2H6 Datasheet - Page 52
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STR750FV2H6
Manufacturer Part Number
STR750FV2H6
Description
MCU 32BIT 256KB FLASH 100-LFBGA
Manufacturer
STMicroelectronics
Series
STR7r
Datasheet
1.STR750FV0T6.pdf
(84 pages)
Specifications of STR750FV2H6
Core Processor
ARM7
Core Size
32-Bit
Speed
60MHz
Connectivity
CAN, I²C, SPI, SSI, SSP, UART/USART, USB
Peripherals
DMA, PWM, WDT
Number Of I /o
72
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LFBGA
Data Bus Width
32 bit
Data Ram Size
16 KB
Interface Type
CAN, I2C, SPI, SSI, SSP, USB
Maximum Clock Frequency
60 MHz
Number Of Programmable I/os
72
Number Of Timers
6
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 16 Channel
For Use With
MCBSTR750UME - BOARD EVAL MCBSTR750 + ULINK-MEMCBSTR750U - BOARD EVAL MCBSTR750 + ULINK2497-5988 - BOARD DEVELOPMENT LOVE STR750497-5754 - KIT STARTER IAR STR750497-5753 - KIT STARTER KEIL FOR STR7/STR9497-5752 - KIT STARTER IAR FOR STR7/STR9497-5751 - KIT STARTER HITEX FOR STR750497-5748 - BOARD EVALUATION FOR STR750XF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-5649
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STR750FV2H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
52/84
Electro magnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 29.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-Static discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Table 30.
1. Data based on product characterisation, not tested in production.
Symbo
V
V
V
Symbol
S
ESD(HBM)
ESD(CDM)
ESD(MM)
EMI
l
Peak level
Parameter
Electro-static discharge voltage
(Human Body Model)
Electro-static discharge voltage
(Machine Model)
Electro-static discharge voltage
(Charge Device Model)
EMI characteristics
Absolute maximum ratings
Flash devices:
V
T
LQFP64 package
conforming to SAE J
1752/3
A
DD_IO
=+25° C,
Ratings
Conditions
=3.3 V or 5 V,
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
Frequency Band
Monitored
T
A
=+25° C
Conditions
Max vs. [f
4/32MHz
22
31
19
>4
OSC4M
Maximum
value
4/60MHz
2000
200
750
/f
26
26
23
>4
HCLK
(1)
]
dBμV
Unit
Unit
-
V