ST7FLITE39F2U6 STMicroelectronics, ST7FLITE39F2U6 Datasheet - Page 146

• Manufacturer Part Number: ST7FLITE39F2U6
• Description: IC MCU 8BIT 8K FLASH 20QFN
• Manufacturer: STMicroelectronics
• Series: ST7r

Specifications of ST7FLITE39F2U6

• Core Processor: ST7
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: LINSCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 7x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-QFN
• For Use With: 497-8406 - BOARD STF20NM50FD/STF7LITE39BF2497-8403 - BOARD DEMO STCC08 AC SW DETECTOR497-6398 - BOARD EVAL ST7FLITE39/STM1403497-5858 - EVAL BOARD PLAYBACK ST7FLITE497-5514 - EVAL BOARD THERMO CONTROL REFRIG497-5049 - KIT STARTER RAISONANCE ST7FLITE
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5635

ST7LITE3xF2
13.7 EMC (ELECTROMAGNETIC COMPATIBILITY) CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
13.7.1 Functional EMS (Electro Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling two LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
■
■
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
13.7.1.1 Designing hardened software to avoid
noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
tion environment and simplified MCU software. It
Table 25: EMS test results
146/173
Symbol
ESD: Electrostatic Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
V
V
FESD
FFTB
Voltage limits to be applied on any I/O pin to induce a
functional disturbance
Fast transient voltage burst limits to be applied
through 100pF on V
tional disturbance
DD
Parameter
DD
and V
and V
DD
pins to induce a func-
SS
through
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) can be repro-
duced by manually forcing a low state on the RE-
SET pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be ap-
plied directly on the device, over the range of
specification values. When unexpected behaviour
is detected, the software can be hardened to pre-
vent unrecoverable errors occurring (see applica-
tion note AN1015).
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
=5V, T
=5V, T
A
A
=+25°C, f
=+25°C, f
Conditions
OSC
OSC
=8MHz
=8MHz
Level/
Class
3B
3B