HD64F3048VTF8 Renesas Electronics America, HD64F3048VTF8 Datasheet - Page 676

IC H8 MCU FLASH 128K 100-QFP

HD64F3048VTF8

Manufacturer Part Number
HD64F3048VTF8
Description
IC H8 MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD64F3048VTF8

Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F3048VX8
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
reached the programming voltage range of 12.0 V ±0.6 V. Do not actually program or erase the
flash memory until Vpp has reached the programming voltage range.
The programming voltage range for programming and erasing flash memory is 12.0 V ±0.6 V
(11.4 V to 12.6 V). Programming and erasing cannot be performed correctly outside this range.
When not programming or erasing the flash memory, ensure that the Vpp voltage does not exceed
the Vcc voltage. This will prevent unintentional programming and erasing.
(12) After the Vpp enable bit (VppE) is cleared, the flash memory read setup time (t
must elapse before the flash memory is read.
When switching from boot mode or user program mode to normal mode (Vpp
V), this setup time is required as the period from VppE bit clearance until the flash memory is
read.
When switching from boot mode to another mode, a mode programming setup time (t
required with respect to the RES release timing.
Note: * The flash memory read setup time stipulates the interval before flash memory is read after
Rev. 7.00 Sep 21, 2005 page 650 of 878
REJ09B0259-0700
the VppE bit is cleared (figure 19.24). Also, when using an external clock (EXTAL input),
after powering on and when returning from standby mode, the flash memory read setup
time must elapse before the flash memory is read.
PP
= 12 V))
12 V, MD2
MDS
) is
FRS
)*
12

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