HD64F3048VTF8 Renesas Electronics America, HD64F3048VTF8 Datasheet - Page 636
HD64F3048VTF8
Manufacturer Part Number
HD64F3048VTF8
Description
IC H8 MCU FLASH 128K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet
1.HD64F3048F16.pdf
(907 pages)
Specifications of HD64F3048VTF8
Core Processor
H8/300H
Core Size
16-Bit
Speed
8MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F3048VX8
- Current page: 636 of 907
- Download datasheet (6Mb)
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
19.5.6
Flowchart for Erasing One Block
Rev. 7.00 Sep 21, 2005 page 610 of 878
REJ09B0259-0700
Erasing Flowchart and Sample Program
Address + 1
No
address
Wait initial value setting x = 6.25 ms
(set bit of block to be erased to 1)
Dummy write to verify address
(flash memory latches address)
(clear bit of erased block to 0)
Write 0 data in all addresses
Clear erase block register
(
Enable watchdog timer
to be erased (prewrite)
Set erase block register
Select erase-verify mode
Set top address in block
Disable watchdog timer
V
Verify (read memory)
PP
(E bit = 1 in FLMCR)
Select erase mode
End of block erase
as verify address
OK
E
Clear
Wait (t
Wait (t
Last address?
Set
Clear EV bit
Wait (x) ms
bit = 1 in FLMCR)
Wait (z) µs
(EV bit = 1)
Clear E bit
Figure 19.10 Erasing Flowchart
n = 1
Start
V
V
PP
VS1
VS2
PP
E
Yes
E
) µs
) µs
bit
bit
*5
*5
*4
*1
*2
*3
No good
Erasing ends
Clear erase block register
(clear bit of block to be
Clear
erased to 0)
Clear EV bit
Erase error
n
Notes: 1. Program all addresses to be
V
PP
N?
Yes
E
PP
bit
2. Set the watchdog timer overflow
3. For the erase-verify dummy
4. Read to verify data from the
5. t
6. The erase time x is successively
= 12 V))
erased by following the prewrite
flowchart.
interval to the value indicated in
table 19.10.
write, write H'FF using a byte
transfer instruction.
memory using a byte transfer
instruction.
z:
t
N:
incremented by the initial set
value
initial value of 6.25 ms or less
should be set, and the time for
one erasure should be 50 ms or
less.
VS1
VS2
: 4 s
: 2 µs
No
Erase-verify ends
5 to 10 s
602
2n
Double the erase time
–1
(n = 1, 2, 3, 4). An
(x
n + 1
n
2
5?
No
n
x)
*6
Yes
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