DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 635

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
Do not apply a constant high level to the FWE pin: The only time a high level should be
applied to the FWE pin in order to prevent erroneous programming or erasing due to program
runaway is when programming or erasing flash memory (including when RAM is being used to
emulate flash memory). A system configuration in which a high level is constantly applied to the
FWE should be avoided. Also, while a high level is applied to the FWE pin, the watchdog timer
should be activated to prevent overprogramming or overerasing due to program runaway, etc.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P or E bit in
FLMCR1, the watchdog timer should be set beforehand as a precaution against program runaway,
etc.
Do not set or clear the SWE bit during program execution in flash memory: Clear the SWE
bit before executing a program or reading data in flash memory. When the SWE bit is set, data in
flash memory can be rewritten, but flash memory should only be accessed for verify operations
(verification during programming/erasing). Similarly, when using the RAM emulation function
while a high level is being input to the FWE pin, the SWE bit must be cleared before executing a
program or reading data in flash memory. However, the RAM area overlapping flash memory
space can be read and written to regardless of whether the SWE bit is set or cleared.
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled during FWE application to give priority to
program/erase operations (including when RAM is being used to emulate flash memory).
Also, it is necessary to prohibit release of the bus.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 32-byte programming unit
block. In writer mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer:
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming: Touching either of these can
cause contact faults and write errors.
Rev. 4.00 Feb 15, 2006 page 609 of 900
REJ09B0291-0400