DF2345TE20 Renesas Electronics America, DF2345TE20 Datasheet - Page 610

• Manufacturer Part Number: DF2345TE20
• Description: MCU 5V 128K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2345TE20

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: POR, PWM, WDT
• Number Of I /o: 71
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2345TE20; HD64F2345TE20

Section 17 ROM
Rev. 4.00 Feb 15, 2006 page 584 of 900
REJ09B0291-0400
Notes: 1. Preprogramming (setting erase block data to all 0) is not necessary.
2. The values of x, y, z, , , , , , and N are shown in section 20.1.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (word) units.
4. Set only one bit in EBR1or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Figure 17.22 Erase/Erase-Verify Flowchart (Single-Block Erase)
Increment
address
NG
NG
Set block start address to verify address
H'FF dummy write to verify address
*5
Clear ESU bit in FLMCR2
Clear SWE bit in FLMCR1
Set SWE bit in FLMCR1
Set ESU bit in FLMCR2
Clear EV bit in FLMCR1
Clear E bit in FLMCR1
Set EV bit in FLMCR1
Last address of block?
Set E bit in FLMCR1
erasing of all erase
Verify data = all 1?
Set EBR1, EBR2
Read verify data
End of erasing
Disable WDT
Enable WDT
Wait (z) ms
Wait (x) s
Wait (y) s
Wait ( ) s
Wait ( ) s
Wait ( ) s
Wait ( ) s
Wait ( ) s
blocks?
End of
n = 1
Start
OK
OK
OK
*1
*2
NG
*2
*4
*2
Start of erase
*2
Halt erase
*2
*2
*2
*2
*3
Clear SWE bit in FLMCR1
Clear EV bit in FLMCR1
Erase failure
Wait ( ) s
n
N?
OK
*2
NG
*2
n
n + 1