MC908GR4CDWE Freescale Semiconductor, MC908GR4CDWE Datasheet - Page 268

• Manufacturer Part Number: MC908GR4CDWE
• Description: IC MCU 4K FLASH 8MHZ 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GR4CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 17
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 6x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 384Byte
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GR
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 8.2 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit, 6 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Electrical Specifications
23.15 Timer Interface Module Characteristics
23.16 Memory Characteristics
268
Input capture pulse width
Timer input capture period
RAM data retention voltage
FLASH program bus clock frequency
FLASH read bus clock frequency
FLASH page erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program HV period
FLASH endurance
FLASH data retention time
1. The minimum period is the number of cycles it takes to execute the interrupt service routine plus 1 t
1. f
2. t
3. t
4. Typical endurance was evaluated for this product family. For additional information on how Freescale defines typical
5. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
Limited endurance (<1 K cycles)
Maximum endurance (> 1 K cycles)
HVEN to 0.
t
Endurance, please refer to Engineering Bulletin EB619.
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
rcv
Read
HV
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
must satisfy this condition: t
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(4)
Characteristic
(5)
MC68HC908GR8 • MC68HC908GR4 Data Sheet, Rev. 7
nvs
+ t
nvh
+ t
pgs
+ (t
PROG
Symbol
f
t
Read
t
MErase
V
t
t
t
PROG
Erase
t
rcv
HV
t
t
t
× 64) ≤ t
nvhl
RDR
—
nvs
nvh
pgs
—
—
(2)
(3)
(1)
HV
max.
t
TIH
Symbol
Min
100
32k
10k
1.3
0.9
3.6
t
10
30
15
—
TLTL
1
4
5
5
1
, t
TIL
See Note
100k
Typ
100
—
—
—
—
—
—
—
—
—
—
—
1
4
Min
2
(1)
Freescale Semiconductor
cyc
8.4M
Max
1.1
5.5
40
—
—
—
—
—
—
—
—
—
—
.
Max
4
—
—
Cycles
Years
MHz
Unit
Unit
ms
ms
ms
Hz
t
t
μs
μs
μs
μs
μs
μs
V
cyc
cyc