AT90USB1287-MUR Atmel, AT90USB1287-MUR Datasheet - Page 23
AT90USB1287-MUR
Manufacturer Part Number
AT90USB1287-MUR
Description
MCU AVR 128K FLASH 16MHZ 64QFN
Manufacturer
Atmel
Series
AVR® 90USBr
Datasheet
1.AT90USB646-MU.pdf
(461 pages)
Specifications of AT90USB1287-MUR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART, USB, USB OTG
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
48
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-VQFN Exposed Pad, 64-HVQFN, 64-SQFN, 64-DHVQFN
Processor Series
AT90USBx
Core
AVR8
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATSTK525, ATAVRISP2, ATAVRONEKIT, AT90USBKEY, ATEVK525, ATAVRQTOUCHX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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5.3
5.3.1
7593K–AVR–11/09
EEPROM Data Memory
EEPROM Read/Write Access
Figure 5-3.
The AT90USB64/128 contains 2K/4K bytes of data EEPROM memory. It is organized as a sep-
arate data space, in which single bytes can be read and written. The EEPROM has an
endurance of at least 100,000 write/erase cycles. The access between the EEPROM and the
CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
page
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
lets the user software detect when the next byte can be written. If the user code contains instruc-
tions that write the EEPROM, some precautions must be taken. In heavily filtered power
supplies, V
period of time to run at a voltage lower than specified as minimum for the clock frequency used.
See “Preventing EEPROM Corruption” on page 28.
situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
380,
page
CC
Address
clk
is likely to rise or fall slowly on power-up/down. This causes the device for some
On-chip Data SRAM Access Cycles
Data
Data
385, and
WR
CPU
RD
page 369
Compute Address
T1
Memory Access Instruction
respectively.
Address valid
for details on how to avoid problems in these
T2
Table
5-3. A self-timing function, however,
AT90USB64/128
Next Instruction
T3
23
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